دیتاشیت STF8N80K5
مشخصات دیتاشیت
| نام دیتاشیت |
STF(I)8N80K5
|
| حجم فایل |
1152.574
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
15
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STF8N80K5
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Power Dissipation (Pd):
25W
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Drain Source Voltage (Vdss):
800V
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Continuous Drain Current (Id):
6A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@100uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
950mΩ@10V,3A
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Package:
TO-220F-3
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Manufacturer:
STMicroelectronics
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Series:
SuperMESH5™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
800V
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Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
950mOhm @ 3A, 10V
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Vgs(th) (Max) @ Id:
5V @ 100µA
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Gate Charge (Qg) (Max) @ Vgs:
16.5nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
450pF @ 100V
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FET Feature:
-
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Power Dissipation (Max):
25W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220FP
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Package / Case:
TO-220-3 Full Pack
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Base Part Number:
STF8N
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detail:
N-Channel 800V 6A (Tc) 25W (Tc) Through Hole TO-220FP
